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| SFP634 Silicon N-Channel MOSFET Features 9A, 250V, RDS(on)(Max 0.45)@VGS=10V Ultra-low Gate Charge(Typical 41nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Thi s Po w e r MOS F ET is pr o du ce d usi n g Wi n se m i ' s adv an ce d planar stripe, DM OS technology. This latest technology has been especi al ly designed to minim ize on- state resistance, have a high ru gg e d ava l an ch e ch a ra cte r ist ic s. Thi s devi ce s is sp e cia l l y we ll s u i t e d fo r l o w v o l t a g e a p p l i c a t i o n s s u c h a s a u t o m o t i v e , h i g h efficiency switching for DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ, Tstg TL Junction and Storage Temperature 0.64 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) (Note 2) (Note 1) (Note 3) (Note1) 5 72 20 300 7.4 4.8 88 A A V mJ mJ V/ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 250 Units V A 9 Channel Temperature *Drain current limited by junction temperature Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Value Min - Typ 0.5 - Max 1.42 62.5 Units /W /W /W 1/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 Electrical Characteristics (Tc = 25 C) 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source Qg plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Qgs Qgd VGS = 10 V, nC ID = 5.6A (Note4,5) 6.5 22 tf toff VDD = 200 V, 41 51.8 RG=12 (Note4,5) 42 19 - Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ Test Condition VGS = 20 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 250 A, VGS = 0 V ID=250A, Referenced to 25 Min 20 250 2 1.6 - Type 0.37 1220 130 32 9.6 21 Max 100 1 4 0.45 - Unit nA V A V V/ V S TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton VDS = 10 V, ID =250 A VGS = 10 V, ID = 5.1A VDS = 50 V, ID = 5.1A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =125 V, ID =5.6A pF ns Source-Drain Ratings and Characteristics (Ta = 25 C) Source- 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 8.1 A, VGS = 0 V IDR = 5.6 A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 1.4 198 1.2 Max 8.1 32 2 2.4 Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0,Starting TJ=25 3.ISD9A,di/dt300A/us, VDD SFP634 3/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 4/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 TO-220 Package Dimension Unit:mm 7/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved |
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